Reflectance study of interwell couplings in GaAs-Ga1xAlxAs double quantum wells

P. Bonnel, P. Lefebvre, B. Gil, H. Mathieu, C. Deparis, J. Massies, G. Neu, and Y. Chen
Phys. Rev. B 42, 3435 – Published 15 August 1990
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Abstract

Reflectance spectra are studied for both symmetric and asymmetric double-quantum-well structures separated by intermediate barriers with various thicknesses. It is shown that the interwell couplings versus the tunneling of the carriers across the barrier has a significant influence on the optical transition properties. Quantitative analyses are presented, which help to identify a number of transitions involving excited states, in asymmetric double wells. A theoretical model agrees with experimental results in several aspects: the interband transition energies, the transition probabilities, and the broadening of the reflectance structures. The effects of interfacial roughness and alloy disorder, in both symmetric and asymmetric systems, are carefully analyzed, which provides a new insight into the broadening of the optical transitions, due to interfacial morphology.

  • Received 16 April 1990

DOI:https://doi.org/10.1103/PhysRevB.42.3435

©1990 American Physical Society

Authors & Affiliations

P. Bonnel, P. Lefebvre, B. Gil, and H. Mathieu

  • Groupe d’Etudes des Semiconducteurs, Université des Sciences et Techniques du Languedoc (Montpellier II), 34095 Montpellier CEDEX 05, France

C. Deparis, J. Massies, and G. Neu

  • Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Parc de Sophia Antipolis, 06560 Valbonne, France

Y. Chen

  • Scuola Normale Superiore, piazza dei Cavallieri 7, I-56125 Pisa, Italy

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Vol. 42, Iss. 6 — 15 August 1990

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