Abstract
We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix.
- Received 12 June 1990
DOI:https://doi.org/10.1103/PhysRevB.42.3209
©1990 American Physical Society
