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Delocalized exciton and electron conduction via the X valley in GaAs/AlAs quantum wells

M. Dutta, Doran D. Smith, P. G. Newman, X. C. Liu, and A. Petrou
Phys. Rev. B 42, 1474(R) – Published 15 July 1990
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Abstract

The results of magnetoreflection, photoluminescence, and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X band of AlAs.

  • Received 12 April 1990

DOI:https://doi.org/10.1103/PhysRevB.42.1474

©1990 American Physical Society

Authors & Affiliations

M. Dutta, Doran D. Smith, and P. G. Newman

  • U.S. Army Electronics Technology and Devices Laboratory (SLCET-ED), Fort Monmouth, New Jersey 07703-5000

X. C. Liu and A. Petrou

  • Department of Physics and Astronomy, State University of New York at Buffalo, Buffalo, New York 14260

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Vol. 42, Iss. 2 — 15 July 1990

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