Abstract
The results of magnetoreflection, photoluminescence, and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X band of AlAs.
- Received 12 April 1990
DOI:https://doi.org/10.1103/PhysRevB.42.1474
©1990 American Physical Society