Piezomodulated reflectivity spectra of GaAs/AlxGa1xAs single-parabolic-quantum-well heterostructures

Y. R. Lee, A. K. Ramdas, A. L. Moretti, F. A. Chambers, G. P. Devane, and L. R. Ram-Mohan
Phys. Rev. B 41, 8380 – Published 15 April 1990
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Abstract

Signatures associated with electronic states confined in a parabolic quantum well in a GaAs/AlxGa1xAs heterostructure have been observed in its piezomodulated reflectivity spectrum. The spectra also exhibit electronic transitions with states confined to the spin-orbit-split valence band as the initial states. A comparison of the relative intensity of 11H and 11L signatures in the piezomodulated and those in the photomodulated reflectivity spectrum emphasizes the contribution of the strain dependence of the energies of the confined states.

  • Received 11 August 1989

DOI:https://doi.org/10.1103/PhysRevB.41.8380

©1990 American Physical Society

Authors & Affiliations

Y. R. Lee and A. K. Ramdas

  • Department of Physics, Purdue University, West Lafayette, Indiana 47907

A. L. Moretti, F. A. Chambers, and G. P. Devane

  • Amoco Technology Company, P.O. Box 400, Naperville, Illinois 60566

L. R. Ram-Mohan

  • Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609

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Issue

Vol. 41, Iss. 12 — 15 April 1990

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