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Potential fluctuations in heterostructure devices

John A. Nixon and John H. Davies
Phys. Rev. B 41, 7929(R) – Published 15 April 1990
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Abstract

The random positions of ionized-impurity ions in doped heterostructures give rise to a random potential, which we have analyzed using a self-consistent method that includes nonlinear screening. A two-dimensional electron gas becomes highly inhomogeneous as its average density is lowered, eventually breaking into isolated puddles and undergoing a classical metal-insulator transition. A quantum wire formed by split gates is strongly distorted by the random potential, impeding ballistic propagation. The wire becomes discontinuous before it is narrow enough to support monomode propagation.

  • Received 30 November 1989

DOI:https://doi.org/10.1103/PhysRevB.41.7929

©1990 American Physical Society

Authors & Affiliations

John A. Nixon and John H. Davies

  • Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, United Kingdom

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Issue

Vol. 41, Iss. 11 — 15 April 1990

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