Abstract
The in-plane motion of electrons in narrow GaAs/As multiple quantum wells is studied experimentally and theoretically as a function of the electron density and the well width . Two characteristic lifetimes—the single-particle relaxation time and the transport scattering time —are obtained from magnetotransport measurements. By comparing and with detailed calculations, the contributions of interface roughness, remote impurity, and alloy disorder scattering are investigated separately.
- Received 11 December 1989
DOI:https://doi.org/10.1103/PhysRevB.41.7864
©1990 American Physical Society