Dimensional quantization in a-Si:H quantum-well structures: The alloy model

M. E. Raikh, S. D. Baranovskii, and B. I. Shklovskii
Phys. Rev. B 41, 7701 – Published 15 April 1990
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Abstract

The effect of dimensional quantization on the density of states in amorphous semiconductors is studied theoretically. The disorder is treated as a random potential with zero correlation length (‘‘white noise’’). The transition of the density of states from staircase to smooth behavior with increasing disorder is traced for high-energy electrons and it was found to occur at substantially smaller film thicknesses than in experimental data. The possibility of resolving this contradiction in other models of disorder is discussed.

  • Received 23 October 1989

DOI:https://doi.org/10.1103/PhysRevB.41.7701

©1990 American Physical Society

Authors & Affiliations

M. E. Raikh, S. D. Baranovskii, and B. I. Shklovskii

  • A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the U.S.S.R., ul. Politekhnicheskaya 26, 194 021 Leningrad, Union of Soviet Socialist Republics

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Issue

Vol. 41, Iss. 11 — 15 April 1990

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