Confined electron and hydrogenic donor states in a spherical quantum dot of GaAs-Ga1xAlxAs

Jia-Lin Zhu, Jia-Jiong Xiong, and Bing-Lin Gu
Phys. Rev. B 41, 6001 – Published 15 March 1990
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Abstract

According to hydrogenic-effective-mass theory, exact solutions and quantum-level structures are presented for confined electron and hydrogenic donor states in a spherical quantum dot (SQD) of GaAs-Ga1xAlxAs. Calculated results reveal that the values of the quantum levels of a confined electron in a SQD can be quite different for cases with finite and infinite barrier heights. The quantum-level sequence and degeneracy for an electron in a SQD are similar to those of a super- atom of GaAs-Ga1xAlxAs but different from those in a Coulomb field. There is stronger confinement and larger binding energy for a hydrogenic donor in a SQD of GaAs-Ga1xAlxAs than in the corresponding quantum-well wires and two-dimensional quantum-well structures. The binding energy and its maximum of the ground state of a donor at the center of a quantum well are found to be strongly dependent on the well dimensionality and barrier height.

  • Received 2 August 1989

DOI:https://doi.org/10.1103/PhysRevB.41.6001

©1990 American Physical Society

Authors & Affiliations

Jia-Lin Zhu

  • Center of Theoretical Physics, Chinese Center of Advanced Science Technology (World Laboratory), P.O. Box 8730, Beijing 100 080, China Department of Physics, Tsinghua University, Beijing 100 084, China

Jia-Jiong Xiong

  • Department of Physics, Tsinghua University, Beijing 100 084, China

Bing-Lin Gu

  • Center of Theoretical Physics, Chinese Center of Advanced Science Technology (World Laboratory), P.O. Box 8730, Beijing 100 080, China Department of Physics, Tsinghua University, Beijing, 100 084, China

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Vol. 41, Iss. 9 — 15 March 1990

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