Transport of an optically generated electron-hole plasma in a semiconductor slab: Approach to stationarity

The perpendicular transport of an optically generated ambipolar electron-hole plasma is investigated in a semiconductor slab. Under the condition of high carrier-carrier scattering rates, a hydrodynamical description with heated and displaced Maxwellians is possible. The transition of the system into its stationary state is examined with respect to the validity of an effective one-component approximation. Scattering mechanisms implying different ratios of momentum and energy relaxation rates are found to induce different spatial profiles of hydrodynamical variables.