Characterization of the electron gas in wide parabolic GaAs/AlxGa1xAs quantum wells

E. G. Gwinn, P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, M. Sundaram, and A. C. Gossard
Phys. Rev. B 41, 10700 – Published 15 May 1990
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Abstract

We demonstrate the production of a thick layer of high-mobility electron gas by comparison of Shubnikov–de Haas oscillations with self-consistent calculations of the ground-state energy levels. Ion-gauge measurements of the average Al flux during a programmed growth sequence show that the Al profile for the parabolic-well structures studied here follows the design profile closely. The calculated and measured energy levels (EF-Ei) agree within the uncertainty of the well parameters.

  • Received 2 January 1990

DOI:https://doi.org/10.1103/PhysRevB.41.10700

©1990 American Physical Society

Authors & Affiliations

E. G. Gwinn, P. F. Hopkins, A. J. Rimberg, and R. M. Westervelt

  • Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138

M. Sundaram and A. C. Gossard

  • Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106

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Vol. 41, Iss. 15 — 15 May 1990

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