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Low-field magnetotransport in p-type GaAs in the regime of variable-range-hopping conductivity

F. Tremblay, M. Pepper, R. Newbury, D. A. Ritchie, D. C. Peacock, J. E. F. Frost, G. A. C. Jones, and G. Hill
Phys. Rev. B 41, 8572(R) – Published 15 April 1990
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Abstract

It is shown that phonon-assisted and activationless variable-range-hopping conduction in p-type GaAs, including transport in zero magnetic field and low-field magnetotransport, are very similar to findings in n-type GaAs previously reported. However, in p-type samples the low-field magnetoresistance is positive rather than negative. The positiveness is suggested to be a manifestation of spin-orbit scattering effects on quantum interference between nearly oriented paths containing local loops much smaller than the size of the coherence volume. The possibility to alter the nature of the paths contributing to interference by the application of a strong electric field is also discussed.

  • Received 6 November 1989

DOI:https://doi.org/10.1103/PhysRevB.41.8572

©1990 American Physical Society

Authors & Affiliations

F. Tremblay, M. Pepper, R. Newbury, D. A. Ritchie, D. C. Peacock, J. E. F. Frost, and G. A. C. Jones

  • Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom

G. Hill

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Issue

Vol. 41, Iss. 12 — 15 April 1990

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