Importance of carrier-carrier scattering for the ambipolar transport of optically generated carriers in a thin semiconductor slab

T. Kuhn and G. Mahler
Phys. Rev. B 39, 1194 – Published 15 January 1989
PDFExport Citation

Abstract

The ambipolar transport of an electronholeacoustic-phonon system in a semiconductor slab of some micrometers thickness is studied in an effective one-component model. Numerical solutions of the Boltzmann equation in relaxation-time approximation are given for different carrier-carrier scattering times τcc. Surprisingly, the resulting profiles of hydrodynamic variables (density, average velocity, and carrier temperature) are found to sensitively depend on this parameter. In the limiting cases of very weak, i.e., τcc large compared with the carrier-phonon scattering time, or very strong carrier-carrier scattering, the profiles can be calculated to a good approximation in hydrodynamic models. In the latter case a nondiffusive velocity overshoot may occur. From the distribution function the line shape of the luminescence spectra is calculated as function of τcc and slab thickness.

  • Received 6 June 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1194

©1989 American Physical Society

Authors & Affiliations

T. Kuhn and G. Mahler

  • Institut für Theoretische Physik, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 39, Iss. 2 — 15 January 1989

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×