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Evidence of a magnetic-field-induced insulator-metal-insulator transition

M. C. Maliepaard, M. Pepper, R. Newbury, J. E. F. Frost, D. C. Peacock, D. A. Ritchie, G. A. C. Jones, and G. Hill
Phys. Rev. B 39, 1430(R) – Published 15 January 1989
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Abstract

We present measurements of the low-temperature conductivity of n-type GaAs doped just on the insulating side of the metal-insulator transition. In zero magnetic field the temperature dependence of the conductivity indicated that the sample was insulating. At moderate fields the conductivity extrapolated to a finite value at T=0, implying that the sample was driven metallic by the field. As the field was further increased, the sample became insulating once more due to wave-function shrinkage. These results support the phase diagram suggested by Shapiro.

  • Received 18 July 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1430

©1989 American Physical Society

Authors & Affiliations

M. C. Maliepaard, M. Pepper, R. Newbury, J. E. F. Frost, D. C. Peacock*, D. A. Ritchie, and G. A. C. Jones

  • Cavendish Laboratory, Cambridge, CB3 OHE, United Kingdom

G. Hill

  • Department of Electronic and Electrical Engineering, Sheffield University, Sheffield S1 3JD, United Kingdom

  • *Also at GEC Hirst Research Centre, Wembley, Middlesex HA9 7PP, United Kingdom.

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Vol. 39, Iss. 2 — 15 January 1989

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