Abstract
Disorder in amorphous semiconductors results in unusual properties of dc conductivity. We demonstrate a quantitative description of the temperature dependence of conductivity in -Si:H. The universal activation energy dependence of the conductivity prefactor (the Meyer-Neldel rule) is reproduced. Excellent agreement with experimental results is obtained by describing disorder and defects using the general thermodynamic ensemble theory for the structure of disordered systems.
- Received 4 April 1988
DOI:https://doi.org/10.1103/PhysRevB.38.1601
©1988 American Physical Society