Negative magnetoresistance in uniaxially stressed Si(100) inversion layers

We have studied the negative magnetoresistance of a two-dimensional electron gas in uniaxially stressed Si(100) metal-oxide-semiconductor transistors. The decrease in the fitting parameter $\alpha$, which is qualitatively explained on the basis of electron-electron interactions, suggests the presence of strong intervalley scattering between heavy- and light-mass subbands. The temperature dependence of ${\tau }_{\mathrm{in}}$ supports the modification of the Landau-Baber scattering term in the presence of significant disorder.