Far-infrared nonlinear optics. II. χ(3) contributions from the dynamics of free carriers in semiconductors

A. Mayer and F. Keilmann
Phys. Rev. B 33, 6962 – Published 15 May 1986
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Abstract

We report the first bulk frequency tripling in the far-infrared. The experiments are carried out at 20 cm1 in the doped semiconductors Ge, Si, and GaAs. Good power conversion efficiency is obtained (103). Our arrangement allows an absolute determination of the nonlinear susceptibility χ(3)(3ω,ω,ω,ω). We show that in the far-infrared, χ(3) is dominated by free-carrier contributions. Hence, our measurement gives new insight into nonlinear transport properties such as the momentum dependence of the effective mass and of the relaxation time. Furthermore strong changes of χ(3) (as well as of the absorption) are found to occur at high laser intensity above 100 kW/cm2, which we attribute to carrier heating and hot carrier transfer into higher energy-band minima.

  • Received 12 November 1985

DOI:https://doi.org/10.1103/PhysRevB.33.6962

©1986 American Physical Society

Authors & Affiliations

A. Mayer and F. Keilmann

  • Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany

See Also

Far-infrared nonlinear optics. I. χ(2) near ionic resonance

A. Mayer and F. Keilmann
Phys. Rev. B 33, 6954 (1986)

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Vol. 33, Iss. 10 — 15 May 1986

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