Electrical resistivity due to dislocations in highly purified copper

We have measured the specific dislocation resistivity in copper single crystals with low densities of dislocations (∼${10}^7$ cm of dislocations per ${\mathrm{cm}}^3$) introduced by bending. The dislocation density was estimated from etch-pit counts. Most of the specimens had residual resistivity ratios of about 40 000 before deformation, this high ratio being produced by oxidation. The specific dislocation resistivity was found to be ∼3×${10}^{\mathrm{-}19}$ Ω ${\mathrm{cm}}^3$, estimated correct to within a factor of 2. We also looked for anisotropy of resistivity in fatigued single crystals and found none.