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Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects

Harold U. Baranger and John W. Wilkins
Phys. Rev. B 30, 7349(R) – Published 15 December 1984
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Abstract

For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an IV characteristic only weakly dependent on the scattering rate.

  • Received 1 October 1984

DOI:https://doi.org/10.1103/PhysRevB.30.7349

©1984 American Physical Society

Authors & Affiliations

Harold U. Baranger and John W. Wilkins

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853

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Issue

Vol. 30, Iss. 12 — 15 December 1984

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