Abstract
For a simple submicron semiconductor structure we have calculated exactly the electron distribution within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in . But at all voltages contact inhomogeneities and local heating (and cooling) produce an characteristic only weakly dependent on the scattering rate.
- Received 1 October 1984
DOI:https://doi.org/10.1103/PhysRevB.30.7349
©1984 American Physical Society