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Bond lengths around isovalent impurities and in semiconductor solid solutions

José Luís Martins and Alex Zunger
Phys. Rev. B 30, 6217(R) – Published 15 November 1984
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Abstract

Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For the five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, the results are in excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, the observed bond-length variations in solid solutions A1xBxC of semiconductor alloys, as well as their excess enthalpies of mixing.

  • Received 11 June 1984

DOI:https://doi.org/10.1103/PhysRevB.30.6217

©1984 American Physical Society

Authors & Affiliations

José Luís Martins and Alex Zunger

  • Solar Energy Research Institute, Golden, Colorado 80401

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Issue

Vol. 30, Iss. 10 — 15 November 1984

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