Study of the reconstructed GaAs(100) surface

J. Ihm, D. J. Chadi, and J. D. Joannopoulos
Phys. Rev. B 27, 5119 – Published 15 April 1983
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Abstract

The reconstruction of an As-terminated GaAs(100) surface has been studied using the self-consistent pseudopotential method. Total energies for the (1 × 1) ideal surface and the c(2×2) and p(2×2) reconstructed surfaces within the dimer model are compared. Unlike the Si(100) surface, at least two inequivalent dimers are required to produce the semiconducting surface and stabilize the system. Important features in the density of states and the valence-charge distribution are presented.

  • Received 20 April 1982

DOI:https://doi.org/10.1103/PhysRevB.27.5119

©1983 American Physical Society

Authors & Affiliations

J. Ihm* and D. J. Chadi

  • Xerox Palo Alto Reserach Center, Palo Alto, California 94303

J. D. Joannopoulos

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

  • *Permanent address: Department of Physics, Massachusetts Institute of Technology, Cambridge, Mass. 02139.

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Vol. 27, Iss. 8 — 15 April 1983

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