Abstract
We analyze the carrier concentrations () resulting from both shallow and deep majority levels. We show that for comparable concentrations of shallow and of compensating levels, a small fraction of deep levels can decrease by orders of magnitude. Also, a quantitative criterion for obtaining semi-insulating material is derived, and implications for obtaining conducting wide-band-gap materials are discussed. Another result: a steep ("deep") slope of vs can result even from small percentages of deep levels.
- Received 22 March 1982
DOI:https://doi.org/10.1103/PhysRevB.26.2250
©1982 American Physical Society