Abstract
Raman scattering by coupled LO-phonon—plasmon modes of large wave vectors and forbidden TO-phonon Raman scattering have been measured in the first-order Stokes-Raman spectra of (100) surfaces of heavily doped -type GaAs with concentrations ranging from to holes . The wave-vector nonconservation and the breakdown of the selection rules are due to scattering by the ionized impurities. The measured peak positions, linewidth, and intensities of the LO-like and TO-like Raman lines are explained by postulating a wave-vector distribution of the modes created in the Raman process. Expressions for this wave-vector distribution which depend on the scattering mechanism involved are discussed.
- Received 28 July 1981
DOI:https://doi.org/10.1103/PhysRevB.24.7217
©1981 American Physical Society