Transistorlike behavior of a Bose-Einstein condensate in a triple-well potential

James A. Stickney, Dana Z. Anderson, and Alex A. Zozulya
Phys. Rev. A 75, 013608 – Published 8 January 2007

Abstract

In the last several years considerable efforts have been devoted to developing Bose-Einstein-condensate-based devices for applications such as fundamental research, precision measurements, and integrated atom optics. Such devices, capable of complex functionality, can be designed from simpler building blocks as is done in microelectronics. One of the most important components of microelectronics is a transistor. We demonstrate that a Bose-Einstein condensate in a three-well potential structure where the tunneling of atoms between two wells is controlled by the population in the third shows behavior similar to that of an electronic field-effect transistor. Namely, it exhibits switching and both absolute and differential gain. The role of quantum fluctuations is analyzed, and estimates of the switching time and parameters for the potential are presented.

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  • Received 18 July 2006

DOI:https://doi.org/10.1103/PhysRevA.75.013608

©2007 American Physical Society

Authors & Affiliations

James A. Stickney1, Dana Z. Anderson2, and Alex A. Zozulya1

  • 1Department of Physics, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
  • 2Department of Physics and JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440, USA

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Vol. 75, Iss. 1 — January 2007

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