Semiconductor-cavity QED in high-Q regimes: Detuning effect

Yu-xi Liu, N. Imoto, Ş. K. Özdemir, Guang-ri Jin, and C. P. Sun
Phys. Rev. A 65, 023805 – Published 4 January 2002
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Abstract

The nonresonant interaction between the high-density excitons in a quantum well and a single-mode cavity field is investigated. An analytical expression for the physical spectrum of the excitons is obtained. The spectral properties of the excitons, which are initially prepared in the number states or the superposed states of the two different number states by the resonant femtosecond pulse pumping experiment, are studied. A numerical study of the physical spectrum is carried out and a discussion of the detuning effect is presented.

  • Received 6 June 2001

DOI:https://doi.org/10.1103/PhysRevA.65.023805

©2002 American Physical Society

Authors & Affiliations

Yu-xi Liu1, N. Imoto1,2,3, Ş. K. Özdemir1,2, Guang-ri Jin4, and C. P. Sun4

  • 1The Graduate University for Advanced Studies (SOKEN), Hayama, Kanagawa 240-0193, Japan
  • 2CREST Research Team for Interacting Carrier Electronics, Hayama, Kanagawa 240-0193, Japan
  • 3NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • 4Institute of Theoretical Physics, The Chinese Academy of Sciences, P.O. Box 2735, Beijing 100080, China

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Vol. 65, Iss. 2 — February 2002

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