Abstract
Based on a trasfer-matrix formalism, photon-assisted tunneling is studied in a strongly driven double-barrier tunneling diode. Two scenarios are considered: A driving potential cos(ωt) acting on the central quantum well, which may be realized with electrostatic gates close to the quantum well, and a driving electric field across the diode generated by a laser field. Strong quenching of the transmission probability is found for certain parameters {,ω} of the driving field, which can be explained in terms of zeros of fractional Bessel functions, (γ/ħω), where γ is a structural parameter. The effect shows a strong similarity to the ‘‘coherent destruction of tunneling’’ recently found in strongly driven quartic double wells.
- Received 13 June 1994
DOI:https://doi.org/10.1103/PhysRevA.51.798
©1995 American Physical Society