Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

Peter Sigmund
Phys. Rev. 184, 383 – Published 10 August 1969
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Abstract

Sputtering of a target by energetic ions or recoil atoms is assumed to result from cascades of atomic collisions. The sputtering yield is calculated under the assumption of random slowing down in an infinite medium. An integrodifferential equation for the yield is developed from the general Boltzmann transport equation. Input quantities are the cross sections for ion-target and target-target collisions, and atomic binding energies. Solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies. Two main stages of the collision cascade have to be distinguished: first, the slowing down of the primary ion and all recoiling atoms that have comparable energies—these particles determine the spatial extent of the cascade; second, the creation and slowing down of low-energy recoils that constitute the major part of all atoms set in motion. The separation between the two stages is essentially complete in the limit of high ion energy, as far as the calculation of the sputtering yield is concerned. High-energy collisions are characterized by Thomas-Fermi-type cross sections, while a Born-Mayer-type cross section is applied in the low-energy region. Electronic stopping is included when necessary. The separation of the cascade into two distinct stages has the consequence that two characteristic depths are important for the qualitative understanding of the sputtering process. First, the scattering events that eventually lead to sputtering take place within a certain layer near the surface, the thickness of which depends on ion mass and energy and on ion-target geometry. In the elastic collision region, this thickness is a sizable fraction of the ion range. Second, the majority of sputtered particles originate from a very thin surface layer (∼5 Å), because small energies dominate. The general sputtering-yield formula is applied to specific situations that are of interest for comparison with experiment. These include backsputtering of thick targets by ion beams at perpendicular and oblique incidence and ion energies above ∼100 eV, transmission sputtering of thin foils, sputtering by recoil atoms from α-active atoms distributed homogeneously or inhomogeneously in a thick target, sputtering of fissionable specimens by fission fragments, and sputtering of specimens that are irradiated in the core of a reactor or bombarded with a neutron beam. There is good agreement with experimental results on polycrystalline targets within the estimated accuracy of the data and the input parameters entering the theory. There is no need for adjustable parameters in the usual sense, but specific experimental setups are discussed that allow independent checks or accurate determination of some input quantities.

  • Received 3 April 1969

DOI:https://doi.org/10.1103/PhysRev.184.383

©1969 American Physical Society

Authors & Affiliations

Peter Sigmund*

  • Metallurgy Division, Argonne National Laboratory, Argonne, Illinois 60439

  • *Visiting Scientist on leave from Kernforschungsanlage, Jülich, Germany.

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Issue

Vol. 184, Iss. 2 — August 1969

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